Modification of grain boundaries in polycrystalline silicon with fluorine and oxygen

Journal Article · Thu Oct 15 00:00:00 EDT 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92826· OSTI ID:6024764

Ginley, D S

Hydrogen plasmas have been shown to significantly reduce barrier heights and recombination center densities in the grain boundaries in polycrystalline silicon. These results have stimulated interest in the use of other modifying agents. We demonstrate here that the exposure of n-type polycrystalline silicon to fluorine and oxygen in molecular and atomic forms can result in increased potential barrier heights. This has implications for the development of silicon varistors and capacitors for use in integrated circuits.

• Research Organization: Sandia National Laboratories Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6024764
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 39:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
CRYSTAL STRUCTURE
CRYSTALS
DATA
ELECTRICAL EQUIPMENT
ELECTRONIC CIRCUITS
ELEMENTS
EQUIPMENT
EXPERIMENTAL DATA
FLUORINE
GRAIN BOUNDARIES
HALOGENS
HYDROGEN
INFORMATION
INTEGRATED CIRCUITS
MATERIALS
MICROELECTRONIC CIRCUITS
MICROSTRUCTURE
N-TYPE CONDUCTORS
NONMETALS
NUMERICAL DATA
OXYGEN
PLASMA
POLYCRYSTALS
POTENTIALS
RECOMBINATION
RESISTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SEMICONDUCTOR RESISTORS
SEMIMETALS
SILICON