Effect of hydrogen content on the properties of reactively sputtered amorphous Si-H

Conference · Mon Jan 01 00:00:00 EST 1979

OSTI ID:6017443

Jeffrey, F R; Shanks, H R; Danielson, G C

Hydrogenated a-Si films containing exclusively monohydride bonding have been produced over a range of hydrogen densities between 0 and 20 at. % by reactive sputtering. Deposition, conductivity, activation energy, and optical gap data are presented for these films. These data indicate that 5 at. % of hydrogen bonds to sites which would otherwise be dangling or spin paired bonds while additional hydrogen replaced Si-Si bonds. It is proposed that hydrogen added above 5 at. % reduces the recombination rate by relaxing the a-Si network.

• Research Organization: Ames Lab., IA (USA)
• DOE Contract Number: W-7405-ENG-82
• OSTI ID: 6017443
• Report Number(s): ISM-237; CONF-790851-4; TRN: 79-021490
• Resource Relation: Conference: 8. international conference on amorphous and liquid semiconductors, Cambridge, MA, USA, 27 Aug 1979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILANES
ACTIVATION ENERGY
PHOTOCONDUCTIVITY
AMORPHOUS STATE
BONDING
DENSITY
FILMS
HYDROGEN
PRESSURE DEPENDENCE
SILICON
SPUTTERING
CRYOGENIC FLUIDS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY
FABRICATION
FLUIDS
HYDRIDES
HYDROGEN COMPOUNDS
JOINING
NONMETALS
PHYSICAL PROPERTIES
SEMIMETALS
SILICON COMPOUNDS
360204* - Ceramics
Cermets
& Refractories- Physical Properties