Hydrogen content of amorphous silicon carbide prepared by reactive sputtering: Effects on films properties
Nearly ''stoichiometric'' amorphous silicon carbide films were prepared by the reactive sputtering of a silicon target in a gaseous mixture of Ar, CH/sub 4/, and H/sub 2/ (or D/sub 2/). The use of the /sup 1/H (/sup 11/B, ..cap alpha..)..cap alpha cap alpha.. nuclear reaction and infrared transmission measurements shows that controlled amounts of hydrogen can be incorporated in the films during deposition. The hydrogen content has a dominant effect on the density of the films, its optical gap, and its refractive index. The films could be well described as a polycarbosilane, made of CH/sub n/, SiH, and SiC groups. Moreover, /sup 11/B bombardment induces a decrease of the hydrogen content and a drastic change in the bonds of the polycarbosilane. In conclusion, we show that reactive sputtering is an alternative to the glow discharge technique previously described by W.E. Spear to obtain amorphous silicon carbide.
- Research Organization:
- P.M.T.-C.P.M., Centre National d'Etudes des Telecommunications, 22301 Lannion, France
- OSTI ID:
- 5373027
- Journal Information:
- J. Appl. Phys.; (United States), Vol. 51:4
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
SILICON CARBIDES
SPUTTERING
AMORPHOUS STATE
ARGON
DENSITY
DEPOSITION
DEUTERIUM
ENERGY GAP
FILMS
GASES
HYDROGEN
INFRARED RADIATION
METHANE
MIXTURES
OPTICAL PROPERTIES
QUANTITY RATIO
SILICON
STOICHIOMETRY
TARGETS
ALKANES
CARBIDES
CARBON COMPOUNDS
CRYOGENIC FLUIDS
DISPERSIONS
ELECTROMAGNETIC RADIATION
ELEMENTS
FLUIDS
HYDROCARBONS
HYDROGEN ISOTOPES
ISOTOPES
LIGHT NUCLEI
NONMETALS
NUCLEI
ODD-ODD NUCLEI
ORGANIC COMPOUNDS
PHYSICAL PROPERTIES
RADIATIONS
RARE GASES
SEMIMETALS
SILICON COMPOUNDS
STABLE ISOTOPES
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication
640301 - Atomic
Molecular & Chemical Physics- Beams & their Reactions