Hydrogen content of amorphous silicon carbide prepared by reactive sputtering: Effects on films properties
Journal Article
·
· J. Appl. Phys.; (United States)
Nearly ''stoichiometric'' amorphous silicon carbide films were prepared by the reactive sputtering of a silicon target in a gaseous mixture of Ar, CH/sub 4/, and H/sub 2/ (or D/sub 2/). The use of the /sup 1/H (/sup 11/B, ..cap alpha..)..cap alpha cap alpha.. nuclear reaction and infrared transmission measurements shows that controlled amounts of hydrogen can be incorporated in the films during deposition. The hydrogen content has a dominant effect on the density of the films, its optical gap, and its refractive index. The films could be well described as a polycarbosilane, made of CH/sub n/, SiH, and SiC groups. Moreover, /sup 11/B bombardment induces a decrease of the hydrogen content and a drastic change in the bonds of the polycarbosilane. In conclusion, we show that reactive sputtering is an alternative to the glow discharge technique previously described by W.E. Spear to obtain amorphous silicon carbide.
- Research Organization:
- P.M.T.-C.P.M., Centre National d'Etudes des Telecommunications, 22301 Lannion, France
- OSTI ID:
- 5373027
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 51:4; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
640301 -- Atomic
Molecular & Chemical Physics-- Beams & their Reactions
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALKANES
AMORPHOUS STATE
ARGON
CARBIDES
CARBON COMPOUNDS
CRYOGENIC FLUIDS
DENSITY
DEPOSITION
DEUTERIUM
DISPERSIONS
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY GAP
FILMS
FLUIDS
GASES
HYDROCARBONS
HYDROGEN
HYDROGEN ISOTOPES
INFRARED RADIATION
ISOTOPES
LIGHT NUCLEI
METHANE
MIXTURES
NONMETALS
NUCLEI
ODD-ODD NUCLEI
OPTICAL PROPERTIES
ORGANIC COMPOUNDS
PHYSICAL PROPERTIES
QUANTITY RATIO
RADIATIONS
RARE GASES
SEMIMETALS
SILICON
SILICON CARBIDES
SILICON COMPOUNDS
SPUTTERING
STABLE ISOTOPES
STOICHIOMETRY
TARGETS
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
640301 -- Atomic
Molecular & Chemical Physics-- Beams & their Reactions
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALKANES
AMORPHOUS STATE
ARGON
CARBIDES
CARBON COMPOUNDS
CRYOGENIC FLUIDS
DENSITY
DEPOSITION
DEUTERIUM
DISPERSIONS
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY GAP
FILMS
FLUIDS
GASES
HYDROCARBONS
HYDROGEN
HYDROGEN ISOTOPES
INFRARED RADIATION
ISOTOPES
LIGHT NUCLEI
METHANE
MIXTURES
NONMETALS
NUCLEI
ODD-ODD NUCLEI
OPTICAL PROPERTIES
ORGANIC COMPOUNDS
PHYSICAL PROPERTIES
QUANTITY RATIO
RADIATIONS
RARE GASES
SEMIMETALS
SILICON
SILICON CARBIDES
SILICON COMPOUNDS
SPUTTERING
STABLE ISOTOPES
STOICHIOMETRY
TARGETS