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Hydrogen content of amorphous silicon carbide prepared by reactive sputtering: Effects on films properties

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.327891· OSTI ID:5373027

Nearly ''stoichiometric'' amorphous silicon carbide films were prepared by the reactive sputtering of a silicon target in a gaseous mixture of Ar, CH/sub 4/, and H/sub 2/ (or D/sub 2/). The use of the /sup 1/H (/sup 11/B, ..cap alpha..)..cap alpha cap alpha.. nuclear reaction and infrared transmission measurements shows that controlled amounts of hydrogen can be incorporated in the films during deposition. The hydrogen content has a dominant effect on the density of the films, its optical gap, and its refractive index. The films could be well described as a polycarbosilane, made of CH/sub n/, SiH, and SiC groups. Moreover, /sup 11/B bombardment induces a decrease of the hydrogen content and a drastic change in the bonds of the polycarbosilane. In conclusion, we show that reactive sputtering is an alternative to the glow discharge technique previously described by W.E. Spear to obtain amorphous silicon carbide.

Research Organization:
P.M.T.-C.P.M., Centre National d'Etudes des Telecommunications, 22301 Lannion, France
OSTI ID:
5373027
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 51:4; ISSN JAPIA
Country of Publication:
United States
Language:
English