Effect of dielectric coating on current-voltage characteristics of Schottky barrier diodes at low temperature

Journal Article · Tue May 01 04:00:00 EDT 1984 · Sov. Phys. J. (Engl. Transl.); (United States)

OSTI ID:6016236

Bozhkov, V G; Malakhovskii, O Yu

It is shown that dielectric coatings (SiO/sub 2/, Si/sub 3/Ni/sub 4/) with rectifying Pd-GaAs contacts in ''windows'' have a significant effect on the low temperature (77/sup 0/K) current-voltage characteristic (CVC). Potential barrier height decreases and the idealness index of the CVC increases. The effect is more intense the greater the metallization thickness. For an Au-GaAs contact the effect is absent even at a metal thickness >1 um. A possible cause of this effect at low temperature is the action of mechanical stresses about the contact periphery.

• OSTI ID: 6016236
• Journal Information: Sov. Phys. J. (Engl. Transl.); (United States), Journal Name: Sov. Phys. J. (Engl. Transl.); (United States) Vol. 26:11; ISSN SOPJA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CHALCOGENIDES
CHEMICAL COATING
DEPLETION LAYER
DEPOSITION
DIELECTRIC MATERIALS
DIELECTRIC PROPERTIES
DIMENSIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROCHEMICAL COATING
ELEMENTS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LAYERS
MATERIALS
METALLURGICAL EFFECTS
METALS
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PALLADIUM
PHYSICAL PROPERTIES
PLATINUM METALS
PNICTIDES
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICON COMPOUNDS
SILICON NITRIDES
SILICON OXIDES
STRESSES
SURFACE COATING
THICKNESS
TRANSITION ELEMENTS