Effect of carrier concentration in the semiconductor on the voltage-current characteristics of schottky barrier diodes at low temperatures
The authors report the results of a study of voltage-current characteristics of gallium arsenide metal-semiconductor Schottky barrier structures, in which palladium and W-Ni alloy were electrochemically deposited in SiO/sub 2/ windows to form the barrier. It is demonstrated that the voltage-current characteristics are significantly distorted at low temperatures. The observed behavior of the voltage-current characteristics at low temperatures - the appearance of excess current and the increase in the ideality factor with carrier concentration in the excess current regime - is explained by a model in which peripheral mechanical stresses in the contacts lower the potential barrier height on the periphery of the contacts.
- OSTI ID:
- 5309249
- Journal Information:
- Sov. Phys. J. (Engl. Transl.); (United States), Journal Name: Sov. Phys. J. (Engl. Transl.); (United States) Vol. 29:10; ISSN SOPJA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360104 -- Metals & Alloys-- Physical Properties
360204 -- Ceramics
Cermets
& Refractories-- Physical Properties
360603* -- Materials-- Properties
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CHALCOGENIDES
CHEMICAL COATING
DEPLETION LAYER
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROCHEMICAL COATING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LAYERS
MATHEMATICAL MODELS
NICKEL ALLOYS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICON COMPOUNDS
SILICON OXIDES
STRESSES
SURFACE COATING
TEMPERATURE DEPENDENCE
TUNGSTEN ALLOYS