Phonon-drag thermoelectric power in high magnetic fields in heterojunctions

Conference · Sat Dec 31 23:00:00 EST 1988

DOI:https://doi.org/10.1016/0039-6028(90)90361-B· OSTI ID:6010766

Lyo, S. K.

A theory is presented for the low-temperature (T) phonon-drag thermopower S/sub xx/ in a semiconductor heterojunction in a strong magnetic field. Gigantic quantum oscillations (much larger than electron-diffusion contributions) are obtained. When the Landau-level width is larger than k/sub B/T, the one-phonon intra-Landau-level absorption and emission processes are dominant. In the opposite limit, the two-phonon Raman processes give major contributions. The temperature and field dependences of S/sub xx/ agree reasonably with recent data in GaAs/Al/sub x/Ga/sub 1-x/As heterojunctions. Effects of localized states on S/sub xx/ are discussed. 14 refs., 3 figs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6010766
• Report Number(s): SAND-89-0542C; CONF-890746-1; ON: DE89013921
• Country of Publication: United States
• Language: English

Related Subjects

656002* -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC COMPOUNDS
ARSENIDES
CONVERSION
DIRECT ENERGY CONVERSION
ENERGY CONVERSION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
HETEROJUNCTIONS
JUNCTIONS
MAGNETIC FIELDS
PHONONS
PNICTIDES
QUASI PARTICLES
RAMAN EFFECT
SEMICONDUCTOR JUNCTIONS
TEMPERATURE DEPENDENCE
THERMOELECTRIC CONVERSION