Low-temperature phonon-drag thermoelectric power in heterojunctions
The phonon-drag contribution to the thermoelectric power is calculated at low temperatures in polar semiconductor heterostructures. Carriers are assumed to interact with longitudinal acoustic phonons through deformation potential and with both longitudinal and transverse acoustic phonons through piezoelectric field. The magnitude and the temperature dependence of the phonon-drag contribution calculated without any adjustable parameter agree reasonably well with recent data from Al/sub x/Ga/sub 1-//sub x/As/GaAs heterolayer. Both piezoelectric scattering and deformation potential scattering yield comparable contributions in the temperature range studied (i.e., below 10 K), although the former (latter) contribution becomes more important below (above) 3--4 K. Dielectric screening is found to reduce the phonon-drag thermopower significantly.
- Research Organization:
- Sandia National Laboratories, Albuquerque, New Mexico 87185
- OSTI ID:
- 6780686
- Journal Information:
- Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 38:9; ISSN PRBMD
- Country of Publication:
- United States
- Language:
- English
Similar Records
Acoustic-phonon-limited mobility and giant phonon-drag thermopower in MgZnO/ZnO heterostructures
Effect of Phonon Drag on the Thermopower in a Parabolic Quantum Well
Related Subjects
360603* -- Materials-- Properties
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
MATERIALS
PHONONS
PHYSICAL PROPERTIES
PNICTIDES
QUASI PARTICLES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
THERMOELECTRIC PROPERTIES