Hall effect and magnetoresistance in extrinsic piezoelectric semiconductors
The Hall effect and transverse magnetoresistance in extrinsic piezoelectric semiconductors such as InSb are investigated according to the scattering processes of carriers in semiconductors. These scattering processes contain the acoustic phonon scattering, the piezoelectric scattering, and the ionized-impurity scattering. The energy band structure of carriers in semiconductors is assumed to be nonparabolic. Results show that Hall angle, Hall coefficient, and transverse magnetoresistance depend strongly on the dc magnetic field and carrier density due to the energy-dependent relaxation time. Comparison with experimental data is made. It is also found that the magnetoresistance in degenerate InSb oscillates with the dc magnetic field due to the scattering of carriers with impurities in semiconductors.
- Research Organization:
- National Chiao Tung Univ., Hsinchu (Taiwan)
- OSTI ID:
- 6010401
- Journal Information:
- J. Low Temp. Phys.; (United States), Journal Name: J. Low Temp. Phys.; (United States) Vol. 73:1-2; ISSN JLTPA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360104 -- Metals & Alloys-- Physical Properties
656002* -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACOUSTICS
ALLOYS
ANTIMONY ALLOYS
BAND THEORY
CHARGE CARRIERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRICITY
ENERGY DEPENDENCE
ENERGY GAP
HALL EFFECT
IMPURITIES
INDIUM ALLOYS
MAGNETIC FIELDS
MAGNETORESISTANCE
MATERIALS
MATHEMATICAL MODELS
PHONONS
PHYSICAL PROPERTIES
PIEZOELECTRICITY
PNICTIDES
QUASI PARTICLES
RELAXATION TIME
SCATTERING
SEMICONDUCTOR MATERIALS