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Influence of energy bands on the Hall effect in degenerate semiconductors

Journal Article · · Journal of Low Temperature Physics; (USA)
DOI:https://doi.org/10.1007/BF00681876· OSTI ID:6140081
 [1];  [2]
  1. National Chiao Tung Univ., Hsinchu (Taiwan)
  2. National Tsing Hua Univ., Hsinchu (Taiwan)

The influence of energy bands on the Hall effect and transverse magnetoresistance has been investigated according to the scattering processes of carriers in degenerate semiconductors such as InSb. Results show that the Hall angle, Hall coefficient, and transverse magnetoresistance depend on the dc magnetic field for both parabolic and nonparabolic band structures of semiconductors and also depend on the scattering processes of carriers in semiconductors due to the energy-dependent relaxation time. From their numerical analysis for the Hall effect, it is shown that the conduction electrons in degenerate semiconductors play a major role for the carrier transport phenomenon. By comparing with experimental data of the transverse magnetoresistance, it shows that the nonparabolic band model is better in agreement with the experimental work than the parabolic band model of semiconductors.

OSTI ID:
6140081
Journal Information:
Journal of Low Temperature Physics; (USA), Journal Name: Journal of Low Temperature Physics; (USA) Vol. 77:1-2; ISSN 0022-2291; ISSN JLTPA
Country of Publication:
United States
Language:
English