H/T scaling of the magnetoconductance near the conductor-insulator transition in two dimensions

Journal Article · Wed Apr 01 04:00:00 EST 1998 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.57.R9420· OSTI ID:600999

Simonian, D; Kravchenko, S V; Sarachik, M P ^[1]; Pudalov, V M ^[2]

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1. City College of the City University of New York, New York, New York 10031 (United States)
2. Institute for High Pressure Physics, Troitsk, 142092 Moscow District (Russia)

For an electron density near the H=0 insulator-to-conductor transition, the magnetoconductivity of the low-temperature conducting phase in high-mobility silicon MOSFETs is consistent with the form {Delta}{sigma}(H{sub {vert_bar}{vert_bar}},T){equivalent_to}{sigma}(H{sub {vert_bar}{vert_bar}},T){minus}{sigma}(0,T)=f(H{sub {vert_bar}{vert_bar}}/T) for magnetic fields H{sub {vert_bar}{vert_bar}} applied parallel to the plane of the electron system. This sets a valuable constraint on theory and provides further evidence that the electron spin is central to the anomalous H=0 conducting phase in two dimensions. {copyright} {ital 1998} {ital The American Physical Society}

• OSTI ID: 600999
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 16 Vol. 57; ISSN 0163-1829; ISSN PRBMDO
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
ELECTRIC CONDUCTIVITY
ELECTRON DENSITY
MAGNETIC FIELDS
MAGNETORESISTANCE
MOSFET
SILICON
TWO-DIMENSIONAL CALCULATIONS