Characterization of the local structure of amorphous GaAs produced by ion implantation

Journal Article · Fri May 01 04:00:00 EDT 1998 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.367244· OSTI ID:600969

Ridgway, M C; Glover, C J ^[1]; Foran, G J ^[2]; Yu, K M ^[3]

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1. Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra (Australia)
2. Australian Nuclear Science and Technology Organisation, Menai (Australia)
3. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

The first report of the structural parameters of amorphous GaAs produced by ion implantation, as determined with extended x-ray absorption fine structure measurements, is presented herein. Relative to a crystalline sample, the nearest-neighbor bond length and Debye{endash}Waller factor both increased for amorphized material. In contrast, the coordination numbers about both Ga and As atoms in the amorphous phase decreased to {approximately}3.85 atoms from the crystalline value of four. All structural parameters were independent of both implant temperature and ion dose, the latter extending two orders of magnitude beyond that required for amorphization, and as a consequence, were considered representative of intrinsic, amorphous GaAs as opposed to an implantation-induced extrinsic structure. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 600969
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 83; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
BOND LENGTHS
DEBYE-WALLER FACTOR
ERRORS
GALLIUM ARSENIDES
ION IMPLANTATION
STRUCTURAL CHEMICAL ANALYSIS
X-RAY DIFFRACTION