Local structural modification in ion damaged InGaAs

Journal Article · Thu Aug 01 04:00:00 EDT 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.117904· OSTI ID:288769

Yu, K M ^[1]; Hsu, L ^[2]

---

1. Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
2. Department of Physics, University of California, Berkeley, California 94720 (United States)

The indium nearest-neighbor environment in InGaAs thin films damaged by Ar ion implantation has been studied by extended x-ray absorption fine structure spectroscopy. We find that before the material turns amorphous by Ar irradiation, the In{endash}As nearest-neighbor distance remains close to its crystalline value even when the layer is heavily damaged but not entirely amorphous. Once the Ar dose exceeds the threshold for amorphizing the InGaAs layer, the In{endash}As bond distance relaxes to that of pure crystalline InAs. This sudden change in local structure as the material transforms from crystalline to amorphous suggests that the transition is due to simultaneous amorphous nucleation rather than the accumulation and overlapping of isolated amorphous regions. Moreover, this change in the local structure in a ternary alloy can be used as a criterion for determining the crystalline-to-amorphous transition of the alloy. {copyright} {ital 1996 American Institute of Physics.}

• Research Organization: Lawrence Berkeley National Laboratory
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 288769
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 69; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHIZATION
AMORPHOUS STATE
ARGON IONS
EXAFS
FINE STRUCTURE
GALLIUM ARSENIDES
INDIUM ARSENIDES
ION IMPLANTATION
PHASE TRANSFORMATIONS
PHYSICAL RADIATION EFFECTS
SYNCHROTRON RADIATION
X-RAY SPECTROSCOPY