Influence of Indium-Nitrogen Interactions on the Local Mode Frequency of Nitrogen in GaAs-based Dilute Nitrides

Journal Article · Thu Jun 30 04:00:00 EDT 2005 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.1994081· OSTI ID:20719089

Alt, H Ch; Gomeniuk, Y V ^[1]; Mussler, G ^[2]

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1. Engineering Physics, FHM - Munich University of Applied Sciences, Lothstrasse 34, 80335 Munich (Germany)
2. Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

Fourier transform infrared absorption measurements have been carried out on nitrogen and indium coimplanted GaAs and nitrogen implanted InGaAs layers grown by molecular beam epitaxy. After rapid thermal annealing, additional absorption bands appear in the frequency region of the local mode of isolated substitutional nitrogen. The bands can be attributed to nitrogen bonding with nearest-neighbor indium atoms. Using a valence-force model, the microscopic identification of the different nitrogen configurations is possible.

• OSTI ID: 20719089
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 772; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTROSCOPY
ANNEALING
CHEMICAL BONDS
CRYSTAL GROWTH
ELECTRONIC STRUCTURE
FOURIER TRANSFORM SPECTROMETERS
GALLIUM ARSENIDES
INDIUM
INFRARED SPECTRA
LAYERS
MOLECULAR BEAM EPITAXY
NITRIDES
NITROGEN
SEMICONDUCTOR MATERIALS