EXAFS characterization of amorphous GaAs

Book · Thu Dec 31 04:00:00 EST 1998

OSTI ID:302415

Ridgway, M C; Glover, C J ^[1]; Foran, G J ^[2]; Yu, K M ^[3]

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1. Australia National Univ., Canberra (Australia)
2. Australian Nuclear Science and Technology Organization, Menai (Australia)
3. Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.

The structural parameters of stoichiometric, amorphous GaAs have been determined with extended x-ray absorption fine structure (EXAFS) measurements performed in transmission mode at 10 K. Amorphous GaAs samples were fabricated with a combination of epitaxial growth, ion implantation and selective chemical etching. Relative to a crystalline sample, the nearest-neighbor bond length and Debye-Waller factor both increased for amorphous material. In contrast, the coordination numbers about both Ga and As atoms in the amorphous phase decreased to {approximately} 3.85 atoms from the crystalline value of four. All structural parameters were independent of implantation conditions and as a consequence, were considered representative of intrinsic, amorphous GaAs as opposed to an implantation-induced extrinsic structure.

• Sponsoring Organization: USDOE, Washington, DC (United States)
• OSTI ID: 302415
• Report Number(s): CONF-980405--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
40 CHEMISTRY
AMORPHOUS STATE
CRYSTAL STRUCTURE
DEBYE-WALLER FACTOR
EXPERIMENTAL DATA
GALLIUM ARSENIDES
ORDER PARAMETERS
RADIATION ABSORPTION ANALYSIS