Amorphous semiconductor sample preparation for transmission EXAFS measurements

Book · Thu Dec 31 04:00:00 EST 1998

OSTI ID:302416

Ridgway, M C; Glover, C J; Tan, H H ^[1]

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1. Australian National Univ., Canberra (Australia). Dept. of Electronic Materials Engineering; and others

A novel methodology has been developed for the preparation of amorphous semiconductor samples for use in transmission extended x-ray absorption fine structure (EXAFS) measurements. Epitaxial heterostructures were fabricated by metal organic chemical vapor deposition (group III-Vs) or molecular beam epitaxy (group IVs). An epitaxial layer of {approximately} 2 {micro}m thickness was separated from the underlying substrate by selective chemical etching of an intermediate sacrificial layer. Ion implantation was utilized to amorphize the epitaxial layer either before or after selective chemical etching. The resulting samples were both stoichiometric and homogeneous in contrast to those produced by conventional techniques. The fabrication of amorphous GaAs, InP, In{sub 0.53}Ga{sub 0.47}As and Si{sub x}Ge{sub 1{minus}x} samples is described. Furthermore, EXAFS measurements comparing both fluorescence and transmission detection, and crystalline and amorphized GaAs, are shown.

• Sponsoring Organization: USDOE, Washington, DC (United States)
• OSTI ID: 302416
• Report Number(s): CONF-980405--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
40 CHEMISTRY
CRYSTAL STRUCTURE
EXPERIMENTAL DATA
FINE STRUCTURE
GALLIUM ARSENIDES
GERMANIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
RADIATION ABSORPTION ANALYSIS
SAMPLE PREPARATION
SILICON COMPOUNDS