Temperature dependence of the internal parameters of heterolasers in the system GaSb/AlGaAsSb

Journal Article · Tue Oct 01 04:00:00 EDT 1985 · J. Appl. Spectrosc. (Engl. Transl.); (United States)

DOI:https://doi.org/10.1007/BF00662498· OSTI ID:6009523

Voronin, V F; Gribkovskii, V P; Ryabtsev, G I; Sosnovskii, S A; Zhukov, N D

The authors make a detailed study of the temperature dependencies of the internal parameters of GaSb/AlGaAsSb laser diodes in order to determine the factors responsible for the strong temperature dependence of the threshold and lasing power of heterolasers of this type. They conclude that the drop in lasing power with increasing temperature occurs as a result of both the increase in the threshold current density and the drop in the differential internal quantum yield.

• OSTI ID: 6009523
• Journal Information: J. Appl. Spectrosc. (Engl. Transl.); (United States), Journal Name: J. Appl. Spectrosc. (Engl. Transl.); (United States) Vol. 42:4; ISSN JASYA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALLOYS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENT DENSITY
ENERGY YIELD
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INTERMETALLIC COMPOUNDS
JUNCTIONS
LASERS
PERFORMANCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE
YIELDS