Characteristics of radiation emitted by GaSb/GaAlAsSb injection heterolasers

Journal Article · Tue Nov 01 04:00:00 EST 1983 · Sov. J. Quant. Electron. (Engl. Transl.); (United States)

DOI:https://doi.org/10.1070/QE1983v013n11ABEH004979· OSTI ID:6941635

Adlivankin, A S; Zhukov, N D; Raigorodskii, V M; Sosnovskii, S A; Shestak, L I

An experimental investigation was made of the emission characteristics of GaSb/GaAlAsSb injection heterolasers in the temperature range from -70 /sup 0/C to +70 /sup 0/C. A study was made of the relationship between the temperature dependences of the threshold current and of the differential quantum efficiency, on the one hand, and the temperature-induced changes in the near-field pattern and in the internal parameters of the lasers, on the other. Continuous stimulated emission was achieved right up to -10 /sup 0/C.

• OSTI ID: 6941635
• Journal Information: Sov. J. Quant. Electron. (Engl. Transl.); (United States), Journal Name: Sov. J. Quant. Electron. (Engl. Transl.); (United States) Vol. 13:11; ISSN SJQEA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EFFICIENCY
EMISSION SPECTRA
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LOW TEMPERATURE
MEDIUM TEMPERATURE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SPECTRA
TEMPERATURE DEPENDENCE