High-efficiency LEDs based on n-GaSb/p-GaSb/n-GaInAsSb/P-AlGaAsSb type-II thyristor heterostructures
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
A new type of light-emitting diodes (LEDs), a high-efficiency device based on an n-GaSb/p-GaSb/n-GaInAsSb/P-AlGaAsSb thyristor heterostructure, with the maximum emission intensity at wavelength {lambda} = 1.95 {mu}m, has been suggested and its electrical and luminescent characteristics have been studied. It is shown that the effective radiative recombination in the thyristor structure in the n-type GaInAsSb active region is provided by double-sided injection of holes from the neighboring p-type regions. The maximum internal quantum efficiency of 77% was achieved in the structure under study in the pulsed mode. The average optical power was as high as 2.5 mW, and the peak power in the pulsed mode was 71 mW, which exceeded by a factor of 2.9 the power obtained with a standard n-GaSb/n-GaInAsSb/P-AlGaAsSb LED operating in the same spectral range. The approach suggested will make it possible to improve LED parameters in the entire mid-IR spectral range (2-5 {mu}m)
- OSTI ID:
- 21088028
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 41; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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