In-Situ Monitoring of GaSb, GaInAsSb, and AlGaAsSb*
- Sandia National Laboratories
The suitability of the wavelength range provided by silicon photodiode detector arrays for monitoring the spectral reflectance during epitaxial growth of GaSb, AlGaAsSb, and GaInAsSb, which have cutoff wavelengths at 25 degree C of 1.7, 1.2, and 2.3 um, respectively, is demonstrated. These alloys were grown lattice matched to GaSb in a vertical rotating-disk reactor, which was modified to accommodate near normal reflectance without affecting epilayer uniformity, By using a virtual interface model, the growth rate and complex refractive index at the growth temperature are extracted for these alloys over the 600 to 1000 nm spectral range. Excellent agreement is obtained between the extracted growth rate and that determined by ex-situ measurement.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 7027
- Report Number(s):
- SAND99-1053J; ON: DE00007027
- Journal Information:
- Journal of Crystal Growth, Journal Name: Journal of Crystal Growth
- Country of Publication:
- United States
- Language:
- English
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