Extending the cutoff wavelength of lattice-matched GaInAsSb/GaSb thermophotovoltaic devices
This paper reports the growth, materials characterization, and device performance of lattice-matched GaInAsSb/GaSb thermophotovoltaic (TPV) devices with cutoff wavelength extended from 2.3 to 2.5 {mu}m. GaInAsSb epilayers were grown lattice matched to GaSb substrates by organometallic vapor phase epitaxy using all organometallic precursors including triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony with diethyltellurium and dimethylzinc as the {ital n}- and {ital p}-type dopants, respectively. The growth temperature was 525&hthinsp;{degree}C. Although these alloys are metastable, a mirror-like surface morphology and room-temperature photoluminescence (PL) are obtained for alloys with PL peak emission at room temperature as long as 2.5 {mu}m. Lattice-matched GaInAsSb/GaSb TPV devices exhibit internal quantum efficiency as high as 90{percent} for devices with a cutoff wavelength of 2.5 {mu}m. The open circuit voltage for extended wavelength devices is 239 mV at 3.6 A/cm{sup 2}. {copyright} {ital 1999 American Institute of Physics.}
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 701032
- Report Number(s):
- CONF-981055--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 460; ISSN 0094-243X; ISSN APCPCS
- Country of Publication:
- United States
- Language:
- English
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