Subpicosecond gain dynamics in GaAlAs laser diodes

Journal Article · Mon Nov 30 04:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98515· OSTI ID:6009335

Kesler, M P; Ippen, E P

Ultrafast gain dynamics in GaAlAs diode amplifiers have been studied using 100 fs optical pulses. Pulse propagation through the amplifier resulted in temporal broadening and pulse shaping due to both gain saturation and material dispersion. Pump-probe experiments indicate the presence of two processes contributing to the gain dynamics but give no evidence of spectral hole burning. A dynamic carrier heating model is presented to explain all of the observed gain nonlinearities, and the implications of our results on the dynamic response of laser diodes are discussed.

• Research Organization: Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
• OSTI ID: 6009335
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:22; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
AMPLIFIERS
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTRONIC EQUIPMENT
EQUIPMENT
EXPERIMENTAL DATA
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
NONLINEAR OPTICS
NUMERICAL DATA
OPTICS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS