Observations of subpicosecond dynamics in GaAlAs laser diodes

Journal Article · Mon Jun 23 04:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96814· OSTI ID:5816451

Stix, M S; Kesler, M P; Ippen, E P

We present results of pump-probe experiments on GaAlAs laser diodes indicating a 0.9-ps relaxation time associated with the device transmission. Subpicosecond, tunable near infrared pulses obtained by fiber compression were used to carry out the experiments. The data strongly support a model in which a nonequilibrium carrier temperature in the active layer is responsible for the observed signal.

• Research Organization: Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
• OSTI ID: 5816451
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:25; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
COMPRESSION
DYNAMICS
FIBERS
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
MECHANICS
OPTICAL FIBERS
OPTICAL PUMPING
PNICTIDES
PUMPING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TUNING