Picosecond gain measurements in a GaAlAs diode laser

Journal Article · Sat Sep 01 00:00:00 EDT 1984 · Opt. Lett.; (United States)

DOI:https://doi.org/10.1364/OL.9.000396· OSTI ID:6559783

Lenth, W

The amplification of injected optical pulses has been used to investigate the temporal response of the gain of a GaAlAs diode laser. Near-infrared dye-laser pulses of 4-psec duration were passed through the active region of the laser diode, which was driven by 80-psec current pulses. The measured gain-buildup time of 325 psec is likely determined by the electrical circuit parameters of the device, i.e., junction capacitance and resistance and parasitic inductance. The gain decayed with a time constant of 375 psec consistent with lateral carrier outdiffusion from the junction region.

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073
• OSTI ID: 6559783
• Journal Information: Opt. Lett.; (United States), Journal Name: Opt. Lett.; (United States) Vol. 9:9; ISSN OPLED
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
COMMUNICATIONS
EQUIPMENT
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
OPTICAL EQUIPMENT
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS