Room-temperature continuous wave lasing characteristics of a GaAs vertical cavity surface-emitting laser
Journal Article
·
· Appl. Phys. Lett.; (United States)
Room-temperature continuous wave (cw) operation of a GaAs vertical microcavity surface-emitting laser has been achieved. An ultrashort cavity device with a cavity length of /similar to/5.5 /mu/m was grown by metalorganic chemical vapor deposition. cw lasing characteristics such as mode properties and temperature characteristics were examined. Single longitudinal mode operation with a side mode suppression ratio of 35 dB was obtained. The temperature range for single mode operation was more than 50 K.
- Research Organization:
- Tokyo Institute of Technology, Research Laboratory of Precision Machinery and Electronics, Nagatsuta 4259, Midori-ku, Yokohama 227, Japan (JP)
- OSTI ID:
- 6004585
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 55:3
- Country of Publication:
- United States
- Language:
- English
Similar Records
Room temperature continuous-wave operation of GaInNAs long wavelength VCSELs
Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
Cryogenic operation of AlGaAs-GaAs vertical-cavity surface-emitting laser at temperatures from 200 K to 6 K
Conference
·
Thu Jun 22 00:00:00 EDT 2000
·
OSTI ID:6004585
+2 more
Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
Journal Article
·
Tue Jul 01 00:00:00 EDT 1997
· Applied Physics Letters
·
OSTI ID:6004585
+4 more
Cryogenic operation of AlGaAs-GaAs vertical-cavity surface-emitting laser at temperatures from 200 K to 6 K
Journal Article
·
Fri Mar 01 00:00:00 EST 1996
· IEEE Photonics Technology Letters
·
OSTI ID:6004585
+5 more
Related Subjects
42 ENGINEERING
GALLIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
SEMICONDUCTOR LASERS
OPERATION
LASER CAVITIES
LASER RADIATION
MEDIUM TEMPERATURE
OPTICAL MODES
ORGANOMETALLIC COMPOUNDS
SURFACE PROPERTIES
TESTING
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
DEPOSITION
ELECTROMAGNETIC RADIATION
GALLIUM COMPOUNDS
LASERS
ORGANIC COMPOUNDS
OSCILLATION MODES
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SURFACE COATING
420300* - Engineering- Lasers- (-1989)
GALLIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
SEMICONDUCTOR LASERS
OPERATION
LASER CAVITIES
LASER RADIATION
MEDIUM TEMPERATURE
OPTICAL MODES
ORGANOMETALLIC COMPOUNDS
SURFACE PROPERTIES
TESTING
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
DEPOSITION
ELECTROMAGNETIC RADIATION
GALLIUM COMPOUNDS
LASERS
ORGANIC COMPOUNDS
OSCILLATION MODES
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SURFACE COATING
420300* - Engineering- Lasers- (-1989)