Cryogenic operation of AlGaAs-GaAs vertical-cavity surface-emitting laser at temperatures from 200 K to 6 K

Journal Article · Fri Mar 01 04:00:00 EST 1996 · IEEE Photonics Technology Letters

DOI:https://doi.org/10.1109/68.481102· OSTI ID:227919

Goncher, G ^[1]; Lu, B ^[2]; Luo, W L; Cheng, J; Hersee, S; Sun, S Z ^[3]; Schneider, R P; Zolper, J C ^[4]

---

1. Tektronix, Inc., Beaverton, OR (United States)
2. SDL Inc., San Jose, CA (United States)
3. Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials
4. Sandia National Labs., Albuquerque, NM (United States)

The authors demonstrate for the first time the CW performance of AlGaAs-GaAs vertical-cavity surface-emitting lasers (VCSEL`s) at cryogenic temperatures from 6 K to 200 K. By detuning the cavity mode with respect to the gain peak so that optimum dc lasing operation is achieved at {approximately} 100 K, they find that this optimum lasing performance can be maintained down to temperatures as low as 6 K. Across a broad range of temperatures from 200 K to 6 K, the minimum threshold current of a 16-{micro}m diameter VCSEL stayed below 4 mA, while its {minus}3-dB modulation bandwidth increased by about 70% to 11 GHz at 6 K, and the external slope efficiency is greater than 70%.

• Research Organization: Sandia National Laboratory
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 227919
• Journal Information: IEEE Photonics Technology Letters, Journal Name: IEEE Photonics Technology Letters Journal Issue: 3 Vol. 8; ISSN 1041-1135; ISSN IPTLEL
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM ARSENIDES
CRYOGENICS
GALLIUM ARSENIDES
LASER CAVITIES
OPERATION
PERFORMANCE
QUANTUM EFFICIENCY
SEMICONDUCTOR LASERS
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
TUNING