GaAs buried heterostructure vertical cavity top-surface emitting lasers

Journal Article · Sat Jun 01 04:00:00 EDT 1991 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/3.89955· OSTI ID:5627551

Ibaraki, A; Furusawa, K; Ishikawa, T; Yodoshi, K; Yamaguchi, K; Niina, T ^[1]

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1. Sanyo Electric Co., Ltd., Hirakata, Osaka 573 (JP)

This paper reports on room temperature CW operation that was achieved with GaAs buried heterostructure (BH) vertical cavity top-surface emitting lasers. CW threshold current of 17.4 mA with lasing wavelength of 911 nm was measured. A 5 x 6 array consisting of these lasers was also demonstrated. Lasing operation was observed with a common voltage for all elements.

• OSTI ID: 5627551
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States) Vol. 27:6; ISSN 0018-9197; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
EMISSION
ENERGY-LEVEL TRANSITIONS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LASER CAVITIES
LASER MATERIALS
LASERS
MATERIALS
OPERATION
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
STIMULATED EMISSION
THRESHOLD CURRENT