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U.S. Department of Energy
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Thin-film polycrystalline silicon research. Final report, August 1983-August 1984

Technical Report ·
DOI:https://doi.org/10.2172/6000257· OSTI ID:6000257
This report contains results of research conducted to explore high-efficiency Si solar cell design concepts primarily utilizing high-quality Si substrates, shallow junctions, and passivated surfaces. Computer-aided design was used to select substrate resistivity, implant energy and dose, and A/R coating design. Several possible grid metals were investigated, including magnesium, ytterbium, titanium, and chromium. Ytterbium gave the best results. Several grid designs were used. Textured surfaces were considered to increase short-circuit current density. Ion-implanted cells were furnace-annealed and rapid flash-lamp annealed; best results were obtained from furnace annealing. I-V-T tests revealed conduction mechanisms for excess currents, which led to improved preparation of solar cell edges and increased efficiency. Three designs, MINP, MNP-P, and MINP-P, were examined. The best implanted cell was the MINP design, with 18.5% AA efficiency and 15.6% TA efficiency. The best diffused cell gave 14.9% AA efficiency and 14.0% TA efficiency. Cl-containing I-layers exhibited improved efficiency, increased uv response, reduced surface state density, and better environmental stability.
Research Organization:
State Univ. of New York, Buffalo (USA)
DOE Contract Number:
AC02-83CH10093
OSTI ID:
6000257
Report Number(s):
SERI/STR-211-2558; ON: DE85002908
Country of Publication:
United States
Language:
English