Process variables for ion implanted MINP and MNP-P silicon solar cells
This dissertation mainly deals with design considerations for high performance ion-implanted silicon solar cells. Although a major portion of this work was performed using the Metal-Insulator-N-P (MINP) design, deviations from this design such as the passivated MNP (MNP-P) were also investigated. The research work presented in this dissertation was performed on single crystal and polycrystalline silicon. In order to optimize the MINP design, a theoretical computer simulation was performed. The results of the computer simulation were used as a guideline, in experimental work, to achieve the optimum N and P layer concentrations and the junction depth in an attempt to achieve a high efficiency. Various design factors were evaluated in order to obtain a high efficiency solar cell. Different ion implantation parameters were evaluated (using As and P) in order to obtain an optimum junction depth and N-layer concentration. The solar cells were also fabricated on different P-type substrates with resistivity values ranging from 0.05-4.0 ..cap omega..-cm. Various anneal procedures, following the ion implantation of the N-layer, were investigated. The various metals evaluated for the top grid contact include Yb, Cr, Al, and Mg.
- Research Organization:
- State Univ. of New York, Buffalo (USA)
- OSTI ID:
- 5051118
- Country of Publication:
- United States
- Language:
- English
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