Grain growth kinetics of Si[sub 3]N[sub 4] during [alpha]/[beta]-transformation

Journal Article · Fri Oct 01 04:00:00 EDT 1993 · Acta Metallurgica et Materialia; (United States)

DOI:https://doi.org/10.1016/0956-7151(93)90108-5· OSTI ID:5993751

Kraemer, M; Hoffmann, M J; Petzow, G ^[1]

---

1. Pulvermetallurgisches Lab., Stuttgart (Germany). Max-Planck Inst. fuer Metallforschung

The growth of [beta]-Si[sub 3]N[sub 4] particles, highly diluted in an oxynitride glass, was analyzed by SEM and the growth features of individual crystals were discussed. The observed linear time law for the length growth during [alpha]/[beta]-transformation was correlated with results of a theoretical analysis taking into account the diffusion in the liquid phase as well as the interface reaction at [alpha]- and [beta]-crystals. The number of initial nuclei was found to be important for a linear time law of growth. Finally, the considerations of the dilute particle system were applied to a Si[sub 3]N[sub 4] ceramic. The opposing influence of growth anisotropy of [beta]-Si[sub 3]N[sub 4] in the presence of a melt and the packing requirements demanding a reduction of the specific surface area is discussed.

• OSTI ID: 5993751
• Journal Information: Acta Metallurgica et Materialia; (United States), Journal Name: Acta Metallurgica et Materialia; (United States) Vol. 41:10; ISSN 0956-7151; ISSN AMATEB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360202* -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
CRYSTAL GROWTH
DIFFUSION
ELECTRON MICROSCOPY
GRAIN GROWTH
KINETICS
MICROSCOPY
NITRIDES
NITROGEN COMPOUNDS
PHASE TRANSFORMATIONS
PNICTIDES
SCANNING ELECTRON MICROSCOPY
SILICON COMPOUNDS
SILICON NITRIDES