Q-switched semiconductor diode lasers

Journal Article · Mon Jan 31 23:00:00 EST 1983 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1983.1071839· OSTI ID:5993530

Tsang, D Z; Walpole, J N

Diode lasers with an intracavity electroabsorption modulator have been operated with full on/off modulation at rates of 3 GHz. In addition, modulation of the lasers has been shown up to a detectorlimited frequency of 6 GHz. A new model of these devices, which includes amplified spontaneous emission and high gain is developed in this paper. A quasi-static gain approximation is introduced and the dynamics of the electron and photon population are modeled by three coupled nonlinear difference equations which can be numerically solved with very little computation time. The model predicts the possibility of a new mode of Q-switched operation with the capacity for repetition rates of tens of gigahertz and binary pulse position modulation at rates of the order of 10 Gbits/s.

• Research Organization: Lincoln Lab., MIT, Lexington, MA 02173
• OSTI ID: 5993530
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 29:2; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ELECTRONS
ELEMENTARY PARTICLES
EMISSION
FERMIONS
FREQUENCY RANGE
GAIN
GHZ RANGE
GHZ RANGE 01-100
LASERS
LEPTONS
MASSLESS PARTICLES
MODULATION
NONLINEAR PROBLEMS
PHOTONS
Q-SWITCHING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS