High-speed optoelectronics: Photodiodes, Q-switched laser diode and photoconductive sampling

Thesis/Dissertation · Mon Jan 01 04:00:00 EST 1990

OSTI ID:5751879

Paslaski, J S

In this thesis, a variety of topics related to high speed optoelectronic devices and measurement techniques using ultrafast optical pulses are presented. Following a brief introduction, the second chapter describes a Q-switched semi-conductor laser using a multi-quantum well active layer both for gain and as an intracavity loss modulator. While Q-Switching does not produce as short a pulse as modelocking, it does offer the advantage of adjustability of the repetition rate making it attractive as a source for digital communication links. It is also found to be preferred to the similar approach of gain switching due to less demanding requirements of the rf modulation power level and waveform. Results include a pulse width of {approximately}20 ps which is fairly independent of the repetition rate, and a limiting repetition rate of 3.2 GHz. The third chapter describes the operating characteristics of GaAs-on-Si lasers and photodiodes with particular attention to their high speed performance. Both the lasers and photodiodes show comparable high speed performance. Both the lasers and photodiodes show comparable high speed performance to similar structures fabricated on GaAs, with most of the shortcomings being in their dc characteristics. In the fourth chapter, a novel approach to improving the resolution of photoconductive sampling is presented, called differential sampling. This technique obviates the need for carrier lifetime reduction usually used to improve temporal resolution, and is in principal only limited by a small (few pc) RC circuit time.

• Research Organization: California Inst. of Tech., Pasadena, CA (United States)
• OSTI ID: 5751879
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
426002 -- Engineering-- Lasers & Masers-- (1990-)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CARRIER LIFETIME
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRONIC EQUIPMENT
ELEMENTS
EQUIPMENT
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LIFETIME
MODE LOCKING
PERFORMANCE
PHOTOCONDUCTIVITY
PHOTODIODES
PHYSICAL PROPERTIES
PNICTIDES
Q-SWITCHING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
SOLID STATE LASERS