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Direct gain modulation of a semiconductor laser by a GaAs picosecond optoelectronic switch

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.93752· OSTI ID:6875446

We report a novel application of high-speed optoelectronic switches for direct gain modulation of semiconductor lasers. A GaAs/GaAlAs buried heterostructure laser is driven by a Cr-doped GaAs photoconducting switch activated by a synchronously mode-locked cw dye laser. Infrared light pulses of 55-ps width are emitted from the semiconductor laser.

Research Organization:
Max--Planck-Institut fuer Festkoerperforschung, Heisenbergstr. 1, D-7000 Stuttgart 80, Federal Republic of Germany
OSTI ID:
6875446
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 42:1; ISSN APPLA
Country of Publication:
United States
Language:
English