Direct gain modulation of a semiconductor laser by a GaAs picosecond optoelectronic switch
Journal Article
·
· Appl. Phys. Lett.; (United States)
We report a novel application of high-speed optoelectronic switches for direct gain modulation of semiconductor lasers. A GaAs/GaAlAs buried heterostructure laser is driven by a Cr-doped GaAs photoconducting switch activated by a synchronously mode-locked cw dye laser. Infrared light pulses of 55-ps width are emitted from the semiconductor laser.
- Research Organization:
- Max--Planck-Institut fuer Festkoerperforschung, Heisenbergstr. 1, D-7000 Stuttgart 80, Federal Republic of Germany
- OSTI ID:
- 6875446
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 42:1; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CHROMIUM
DOPED MATERIALS
DYE LASERS
ELECTRICAL EQUIPMENT
ELECTROMAGNETIC RADIATION
ELEMENTS
EQUIPMENT
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFRARED RADIATION
JUNCTIONS
LASERS
LIQUID LASERS
MATERIALS
METALS
MODE LOCKING
MODULATION
OPTICAL PUMPING
PNICTIDES
PULSES
PUMPING
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SWITCHES
SYNCHRONIZATION
TRANSITION ELEMENTS
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CHROMIUM
DOPED MATERIALS
DYE LASERS
ELECTRICAL EQUIPMENT
ELECTROMAGNETIC RADIATION
ELEMENTS
EQUIPMENT
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFRARED RADIATION
JUNCTIONS
LASERS
LIQUID LASERS
MATERIALS
METALS
MODE LOCKING
MODULATION
OPTICAL PUMPING
PNICTIDES
PULSES
PUMPING
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SWITCHES
SYNCHRONIZATION
TRANSITION ELEMENTS