Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier
Patent
·
OSTI ID:5987204
A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon is described. The high work function metal and thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.
- Assignee:
- RCA Corp.
- Patent Number(s):
- US 4163677
- OSTI ID:
- 5987204
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
DESIGN
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELECTRIC DISCHARGES
FABRICATION
GLOW DISCHARGES
P-TYPE CONDUCTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SILICON SOLAR CELLS
SOLAR CELLS
THICKNESS
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
DESIGN
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELECTRIC DISCHARGES
FABRICATION
GLOW DISCHARGES
P-TYPE CONDUCTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SILICON SOLAR CELLS
SOLAR CELLS
THICKNESS