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U.S. Department of Energy
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Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

Patent ·
OSTI ID:5987204
A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon is described. The high work function metal and thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.
Assignee:
RCA Corp.
Patent Number(s):
US 4163677
OSTI ID:
5987204
Country of Publication:
United States
Language:
English