Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier
Patent
·
OSTI ID:863404
- Yardley, PA
- Princeton, NJ
A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.
- Research Organization:
- RCA Labs., Princeton, NJ (USA)
- Assignee:
- RCA Corporation (New York, NY)
- Patent Number(s):
- US 4163677
- OSTI ID:
- 863404
- Country of Publication:
- United States
- Language:
- English
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thickness
type dopant
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