skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

Abstract

A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

Inventors:
 [1];  [2]
  1. Yardley, PA
  2. Princeton, NJ
Publication Date:
Research Org.:
RCA Labs., Princeton, NJ (USA)
OSTI Identifier:
863404
Patent Number(s):
US 4163677
Assignee:
RCA Corporation (New York, NY)
DOE Contract Number:  
EY-76-C-03-1286
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
schottky; barrier; amorphous; silicon; solar; cell; doped; region; adjacent; metal; incorporating; highly; p-type; hydrogenated; disposed; function; intrinsic; forms; surface; junction; layer; thickness; concentration; dopants; selected; ionized; found; increase; circuit; voltage; current; photovoltaic; device; adjacent metal; doped p-type; cell incorporating; circuit voltage; schottky barrier; silicon layer; amorphous silicon; solar cell; hydrogenated amorphous; photovoltaic device; silicon solar; highly doped; p-type region; p-type dopant; region adjacent; p-type dopants; type dopant; barrier amorphous; function metal; surface barrier; type dopants; intrinsic region; /136/257/

Citation Formats

Carlson, David E, and Wronski, Christopher R. Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier. United States: N. p., 1979. Web.
Carlson, David E, & Wronski, Christopher R. Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier. United States.
Carlson, David E, and Wronski, Christopher R. 1979. "Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier". United States. https://www.osti.gov/servlets/purl/863404.
@article{osti_863404,
title = {Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier},
author = {Carlson, David E and Wronski, Christopher R},
abstractNote = {A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.},
doi = {},
url = {https://www.osti.gov/biblio/863404}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1979},
month = {1}
}