Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

Patent · Mon Jan 01 00:00:00 EST 1979

OSTI ID:863404

Carlson, David E ^[1]; Wronski, Christopher R ^[2]

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1. Yardley, PA
2. Princeton, NJ

A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

• Research Organization: RCA Labs., Princeton, NJ (USA)
• DOE Contract Number: EY-76-C-03-1286
• Assignee: RCA Corporation (New York, NY)
• Patent Number(s): US 4163677
• OSTI ID: 863404
• Country of Publication: United States
• Language: English

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amorphous
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incorporating
highly
p-type
hydrogenated
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function
intrinsic
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surface
junction
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thickness
concentration
dopants
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amorphous silicon
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hydrogenated amorphous
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highly doped
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p-type dopants
type dopant
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function metal
surface barrier
type dopants
intrinsic region
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