Thin-film gallium arsenide homojunction solar cells

Journal Article · Sun Nov 15 04:00:00 EST 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92563· OSTI ID:5985391

Chu, S S; Chu, T L; Zhang, F S; Book, L; Yu, J M

Thin-film homojunction gallium arsenide solar cells of p/sup +//n/n/sup +/ configuration have been deposited on tungsten coated graphic substrates by the reaction of gallium, hydrogen chloride, and arsine containing appropriate dopants. Solar cells of 8-cm/sup 2/ area with an AM1 efficiency of about 7% have been prepared for the first time. The solar cells are characterized by dark and illuminated current-voltage and quantum efficiency measurements.

• Research Organization: Southern Methodist University, Dallas, Texas 75275
• OSTI ID: 5985391
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 39:10; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CARBON
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
CONFIGURATION
DEPOSITION
DIRECT ENERGY CONVERTERS
DOPED MATERIALS
EFFICIENCY
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
FILMS
GALLIUM
GALLIUM ARSENIDE SOLAR CELLS
GRAPHITE
HOMOJUNCTIONS
HYDROCHLORIC ACID
HYDROGEN COMPOUNDS
INORGANIC ACIDS
JUNCTIONS
MATERIALS
METALS
N-TYPE CONDUCTORS
NONMETALS
P-TYPE CONDUCTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
QUANTUM EFFICIENCY
REFRACTORY METALS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
SUBSTRATES
SURFACE COATING
TRANSITION ELEMENTS
TUNGSTEN