Effect of deep dislocation levels in silicon on the properties of p-n junctions

Journal Article · Fri Jul 01 00:00:00 EDT 1988 · Sov. Phys. J. (Engl. Transl.); (United States)

DOI:https://doi.org/10.1007/BF00896691· OSTI ID:5978155

Zakharov, A G; Dudko, V G; Nabokov, G M; Sechenov, D A

We present the results of studies on the influence of deep levels, due to dislocations in electronic-grade silicon, on the lifetime of minority carriers and on the current-voltage and capacitance-voltage characteristics of p-n junctions. The parameters of the deep levels were determined by means of dynamic spectroscopy. The carrier lifetime in the high-resistance region of the p-n junction correlates well with the dislocation density and varies from 10/sup /minus/7/ sec to 3 /centered dot/10/sup /minus/6/ sec when the dislocation density N/sub d/ varies from 10/sup 7/ cm/sup /minus/2/ to 5 /centered dot/10/sup 3/ cm/sup /minus/2/. The voltage across the p-n junction at a high level of injection varies 1.6 to 6.2 v as a function of N/sub d/. The ionization energy of deep levels associated with dislocation in silicon is 0.44 and 0.57 eV, measured from the bottom of the conduction band.

• Research Organization: V.D. Kalmykov Radio Engineering Institute, Taganrov (USSR)
• OSTI ID: 5978155
• Journal Information: Sov. Phys. J. (Engl. Transl.); (United States), Journal Name: Sov. Phys. J. (Engl. Transl.); (United States) Vol. 31:1; ISSN SOPJA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
BORON
CARRIER LIFETIME
CHARGE CARRIERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEEP LEVEL TRANSIENT SPECTROSCOPY
DIFFUSION
DISLOCATIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY GAP
FILMS
JUNCTIONS
LIFETIME
LINE DEFECTS
MATERIALS
N-TYPE CONDUCTORS
P-N JUNCTIONS
PHYSICAL PROPERTIES
RECOMBINATION
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SPECTROSCOPY
THIN FILMS
TRAPPING