Self-consistent analysis of gain saturation in channeled-substrate-planar double-heterojunction lasers

Journal Article · Mon Nov 30 04:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98524· OSTI ID:5971924

Butler, J K; Evans, G A

A self-consistent model for semiconductor lasers (using the channeled-substrate-planar (CSP) double-heterojunction (DH) laser as an example) which does not assume constant optical power along the laser axis is developed. This approach allows for the analysis of high-power lasers with low facet reflectivities which produce nonuniform photon densities along the propagation direction. Analytical equations for the modal gain coefficient, the threshold current density, and the radiated power for a specific CSP laser structure are obtained.

• Research Organization: David Sarnoff Research Center, CN 5300, Princeton, New Jersey 08543-5300
• OSTI ID: 5971924
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:22; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
DATA
DESIGN
GAIN
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
POWER
SATURATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THEORETICAL DATA