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Effects of the current distribution on the characteristics of the semiconductor laser with a channeled-substrate planar structure

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.328831· OSTI ID:6569619
Effects of the current distribution along the junction plane on the lateral- and longitudinal-mode behaviors of the semiconductor laser with a channeled-substrate planar (CSP) structure are investigated experimentally and theoretically. A new laser structure of the double-crurent-confinement CSP type, which has two electrodes for pumping and only one channel for stimulated emission (TEPOSE), was employed for this study. Current distribution profile of this laser can be varied by changing the relative strength of the current in each electrode. Experimental results showed that an asymmetric current profile can degrade the fundamental-lateral mode operation. A theoretical model based on phase-locked two-mode excitation was developed to account for the far-field pattern of a TEPOSE laser with only one electrode excited. It is also found that nonuniform excitation over the lasing mode can lead to a multilongitudinal mode operation, probably owing to nonuniformity in quasi-Fermi-level separation. The present study demonstrates the importance of symmetric and uniform current distribution in designing semiconductor lasers.
Research Organization:
Department of Electrical Engineering and Computer Sciences and the Electronics Research Laboratory, University of California, Berkeley, California 94720
OSTI ID:
6569619
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 52:2; ISSN JAPIA
Country of Publication:
United States
Language:
English