Analysis and performance of channeled-substrate-planar double-heterojunction lasers with geometrical asymmetries

Journal Article · Sun Nov 01 04:00:00 EST 1987 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1987.1073244· OSTI ID:5551623

Butler, J K; Evans, G A; Goldstein, B

The effects of geometrical asymmetries on the optoelectronic properties of CSP-DH lasers using self-consistent calculations of the optical field and the electron-hole distribution in the active layer are analyzed and compared with device measurements. Laser properties modeled include gain profile, threshold, slope efficiency, near field, and far field. This analysis shows that small geometrical asymmetries due to device fabrications can produce significant changes in the optical and electrical properties of CSP-DH lasers, especially at high-output power levels. For example, a 0.5 ..mu..m misalignment of the Zn diffusion with respect to the substrate channel can produce lateral near-field and far-field shifts of 0.6 ..mu..m and 2.5/sup 0/, respectively, and limit single spatial mode operation to about 30 mW.

• Research Organization: Dept. of Electrical Engineering, Southern Methodist Univ., Dallas, TX 75275
• OSTI ID: 5551623
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-23:11; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ASYMMETRY
DOCUMENT TYPES
ELECTRICAL PROPERTIES
ELEMENTS
HETEROJUNCTIONS
JUNCTIONS
LASERS
METALS
OPTICAL PROPERTIES
PERFORMANCE
PHYSICAL PROPERTIES
REVIEWS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SUBSTRATES
ZINC