Method for high resolution lithography

Patent · Tue Oct 09 04:00:00 EDT 1984

OSTI ID:5964467

Tobias, E

A method for performing high resolution lithography. The first step involves disposing on a substructure having a surface layer to be patterned a layer of a resist material characterized by both substantial degradation sensitivity for incident ionizing radiation of a predetermined type and substantial instability of undegraded regions for a predetermined plasma etchant which attacks the surface layer. The next step is to expose a prearranged pattern of regions of the resist layer to the predetermined type of radiation to produce a corresponding pattern of degraded resist regions. Then the pattern of degraded resist regions is removed using a preselected developing solution. The next step is to modify the resist material to increase the stability thereof for the plasma etchant by exposing the developed resist layer to ionizing radiation of a type which has been predetermined to degrade the resist material and then baking the degraded resist layer. The final step is to etch the exposed regions of the surface layer using said plasma etchant.

• Assignee: Amdahl Corporation
• Patent Number(s): US 4476216
• OSTI ID: 5964467
• Country of Publication: United States
• Language: English

Related Subjects

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42 ENGINEERING
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BEAMS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON BEAMS
ELECTRONIC CIRCUITS
ETCHING
FABRICATION
INTEGRATED CIRCUITS
LEPTON BEAMS
MASKING
MATERIALS
MICROELECTRONIC CIRCUITS
PARTICLE BEAMS
PHYSICAL PROPERTIES
PLASMA
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACE FINISHING
SURFACE TREATMENTS
TRANSISTORS