Transient response of GaAs microwave power FET to x-ray pulses

Conference · Fri Dec 31 23:00:00 EST 1982

OSTI ID:5964324

Armendariz, M G; Castle, Jr, J G

The primary purpose of this work is to measure the dependence of the time to recover normal microwave output and of the peak photocurrents in state-of-the-art GaAsFETs on the incident flux of x-rays and on circuit loading. The scope of this report includes a comparison of the observed device responses for the medium power GaAsFET AT8150 operated in different test circuits at x-ray intensities up to 9E10 rads(Si)/s.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5964324
• Report Number(s): SAND-83-0479C; CONF-830769-1; ON: DE83015103
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ELECTRONIC EQUIPMENT
EQUIPMENT
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IONIZATION
IONIZING RADIATIONS
MICROWAVE EQUIPMENT
PHOTOCURRENTS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
TRANSIENTS
TRANSISTORS
X RADIATION