Growth of BN thin films by pulsed laser deposition

Conference · Mon Dec 31 23:00:00 EST 1990

OSTI ID:5958396

Knapp, J A

A new uhv chamber for doing Pulsed Laser Deposition of materials is described, together with results from preliminary experiments for depositions of BN on Si. The system is designed to allow for in-situ diagnostics of the ablation plasma, as well as uhv preparation and characterization of clean sample substrates. The room temperature depositions of BN result in amorphous, B-rich films, whose particle content is a strong function of laser wavelength.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: DOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5958396
• Report Number(s): SAND-91-1528C; CONF-911202--33; ON: DE92005462
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
ABLATION
BORON COMPOUNDS
BORON NITRIDES
CRYSTAL STRUCTURE
DEPOSITION
ELECTROMAGNETIC RADIATION
ELEMENTS
FILMS
LASER RADIATION
MICROSTRUCTURE
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
RADIATIONS
SEMIMETALS
SILICON
THIN FILMS