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Growth of cubic BN films on {beta}-SiC by ion-assisted pulsed laser deposition

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.113484· OSTI ID:46410
; ;  [1];  [2]
  1. Sandia National Laboratories, Livermore, California 94550 (United States)
  2. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

Cubic BN({ital c}-BN) films were deposited on cubic SiC ({beta}-SiC) films on Si(100) by ion-assisted pulsed laser deposition. The films were nearly phase pure, with {ital c}-BN fractions of up to {similar_to}90% as determined by infrared spectroscopy. Cross-sectional transmission electron microscopy showed that much of the film/substrate interface had a thin amorphous layer next to the {beta}-SiC, followed by hexagonal/turbostratic BN ({ital h}-BN/{ital t}-BN), and then polycrystalline {ital c}-BN, as commonly observed on Si substrates. However, there are also {ital c}-BN crystals that extend to within 10 A of the SiC interface, {ital with} {ital no} {ital intervening} {ital h}-{ital BN}/{ital t}-{ital BN} {ital layer}. A sharp falloff in {ital c}-BN content was observed for substrate temperatures {lt}150 {degree}C, and below 100 {degree}C {ital c}-BN did not form for any ratio of the ion current flux to the deposition flux. At a different ion-to-substrate angle (20{degree} closer to glancing incidence) the falloff in {ital c}-BN content for {ital T}{lt}150 {degree}C was less sharp. The existence of a critical temperature for {ital c}-BN formation does not result from a nitrogen deficiency at low temperature since film stoichiometry did not change with temperature.

Research Organization:
Sandia National Laboratory
DOE Contract Number:
AC04-94AL85000
OSTI ID:
46410
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 66; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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