Substrate effects in cubic boron nitride film formation

Journal Article · Sun Dec 31 23:00:00 EST 1995 · Journal of Vacuum Science and Technology, A

DOI:https://doi.org/10.1116/1.579928· OSTI ID:253465

Mirkarimi, P B; McCarty, K F; Cardinale, G F; Medlin, D L; Ottesen, D K; Johnsen, H A ^[1]

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1. Sandia National Laboratories, Livermore, California 94550 (United States)

We have examined the effect of the substrate in cubic boron nitride ({ital c}-BN) film synthesis by depositing BN films on a variety of materials using ion-assisted pulsed laser deposition. Using optical modeling, we estimated the {ital c}-BN content of the films from the measured infrared reflectance spectra. We find less {ital c}-BN in films grown on metal substrates than in films grown on Si and SiC/Si substrates. The {ital c}-BN content of the films decreased with decreasing substrate microhardness. This result is qualitatively consistent with the model of stress-induced {ital c}-BN film formation. {copyright} {ital 1996 American Vacuum Society}

• Research Organization: Sandia National Laboratory
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 253465
• Journal Information: Journal of Vacuum Science and Technology, A, Journal Name: Journal of Vacuum Science and Technology, A Journal Issue: 1 Vol. 14; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON NITRIDES
COMPARATIVE EVALUATIONS
CUBIC LATTICES
ENERGY BEAM DEPOSITION FILMS
INFRARED RADIATION
MICROHARDNESS
OPTICAL REFLECTION
SILICON
SILICON CARBIDES
STRESSES
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K