Photoluminescence of undoped (100) InP homoepitaxial films grown by molecular beam epitaxy

Journal Article · Mon Oct 01 04:00:00 EDT 1979 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.91204· OSTI ID:5957452

Kawamura, Y; Ikeda, M; Asahi, H; Okamoto, H

A comparative study is given of the photoluminescence properties between undoped (100) InP homoepitaxial MBE and LPE films and bulk crystals. All of the samples show two peaks; one is a near band-edge emission at 1.41 eV with a small shoulder and the other is at about 1.13 eV. It is shown that the MBE films have a near band-edge emission with intensity comparable with the LPE films, and exhibit a smaller amount of deep-level emission than the LPE films and bulk crystals.

• Research Organization: Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo 180, Japan
• OSTI ID: 5957452
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 35:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
320302* -- Energy Conservation
Consumption
& Utilization-- Industrial & Agricultural Processes-- Materials
BEAMS
COMPARATIVE EVALUATIONS
CRYSTAL GROWTH
CRYSTALS
EMISSION
EPITAXY
FILMS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LUMINESCENCE
MOLECULAR BEAMS
PEAKS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES