Electronic transport and microstructure in molybdenum silicide thin films

Journal Article · Tue Dec 15 04:00:00 EST 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92632· OSTI ID:5951515

Weinmeister, R E; Mahan, J E

Electronic transport and microstructure were investigated in molybdenum silicide thin films prepared by ion beam sputtering from a MoSi/sub 2/ powder source. Auger and x-ray analysis of the as-deposited films indicated a gross Mo/Si atomic ratio of approx.1/2, but a probable microstructure of strongly oriented Mo/sub 5/Si/sub 3/ crystallites in a Si-rich amorphous matrix. High-temperature annealing reduced the room-temperature resistivity by almost an order of magnitude, changed the sign of the temperature coefficient from negative to positive, and increased the Hall coefficient. The annealing also apparently increased the volume fraction of the film occupied by the oriented Mo/sub 5/Si/sub 3/ phase. It is shown that detailed transport data is needed for correctly evaluating the potential of refractory metal silicides as an improved gate electrode and interconnection material for integrated circuits.

• Research Organization: Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado 80523
• OSTI ID: 5951515
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 39:12; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
AMORPHOUS STATE
ANNEALING
AUGER ELECTRON SPECTROSCOPY
CHARGED PARTICLES
CHARGED-PARTICLE TRANSPORT
CRYSTAL STRUCTURE
CRYSTALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON SPECTROSCOPY
ELECTRONS
ELEMENTARY PARTICLES
FERMIONS
FILMS
HALL EFFECT
HEAT TREATMENTS
IONS
LEPTONS
MEDIUM TEMPERATURE
MICROSTRUCTURE
MOLYBDENUM COMPOUNDS
MOLYBDENUM SILICIDES
ORIENTATION
PHYSICAL PROPERTIES
POWDERS
QUANTITY RATIO
RADIATION TRANSPORT
REACTIVITY COEFFICIENTS
SILICIDES
SILICON COMPOUNDS
SPECTRA
SPECTROSCOPY
SPUTTERING
TEMPERATURE COEFFICIENT
TRANSITION ELEMENT COMPOUNDS
X-RAY SPECTRA