New fabrication method for 1. 3-. mu. m GaInAsP/InP buried crescent lasers using a reactive ion beam etching technique

Journal Article · Mon Nov 30 00:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98518· OSTI ID:5950746

Kasukawa, A; Iwase, M; Hiratani, Y; Matsumoto, N; Ikegami, Y; Irikawa, M; Kashiwa, S

A 1.3-..mu..m GaInAsP/InP buried crescent laser on a p-type InP substrate was demonstrated. An active region width narrower than 1.5 ..mu..m was achieved with good controllability and reproducibility using the newly introduced reactive ion beam etching technique for the etching process. Stable fundamental transverse mode operation with low threshold currents of 15--25 mA was obtained. Less than 5% degradation in threshold current at 50 /sup 0/C was achieved with a constant driving current of 150 mA at 70 /sup 0/C for 100 h.

• Research Organization: Yokohama RandD Laboratories, The Furukawa Electric Co., 2-3-4 Okano, Nishi-ku, Yokohama 220, Japan
• OSTI ID: 5950746
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 51:22
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
GALLIUM ARSENIDES
ETCHING
ION COLLISIONS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
SEMICONDUCTOR LASERS
FABRICATION
OPERATION
EXPERIMENTAL DATA
PERFORMANCE
THRESHOLD CURRENT
ARSENIC COMPOUNDS
ARSENIDES
COLLISIONS
CURRENTS
DATA
ELECTRIC CURRENTS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SURFACE FINISHING
420300* - Engineering- Lasers- (-1989)