Stripe geometry semiconductor laser device

Patent · Tue Sep 15 04:00:00 EDT 1987

OSTI ID:5950625

Hayakawa, T; Suyama, T; Yamamoto, S

This patent describes a stripe geometry semiconductor laser. A multi-layered crystal structure is described having a substrate and an active layer for laser oscillator. An etching blocking layer on the multi-layered crystal structure is included and a striped mesa-type multi-layered crystal, including a cladding layer, which serves as an electroconductive region and is disposed on the etching blocking layer. This results in a difference in the distribution of the refractive index of light with regard to the active layer between the inside and the outside of the striped mesa-type multi-layered crystal.

• Assignee: Sharp Kabushiki Kaisha, Osaka
• Patent Number(s): US 4694460
• OSTI ID: 5950625
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CRYSTAL STRUCTURE
CRYSTALS
DESIGN
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ETCHING
GEOMETRY
LASERS
LAYERS
MATHEMATICS
OPTICAL PROPERTIES
OPTICS
OSCILLATIONS
PHYSICAL PROPERTIES
RADIATIONS
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SUBSTRATES
SURFACE FINISHING
VISIBLE RADIATION