Ridged substrate internally diffused stripe AlGaAs laser emitting in the visible wavelength region

Journal Article · Tue Nov 01 04:00:00 EST 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94516· OSTI ID:5679933

van Oirschot, T G.J.; Valster, A; de Poorter, J A

The ridged substrate internally diffused stripe (RIDS) laser, a new gain-guided AlGaAs diode laser structure emitting light in the short wavelength region, is described. The five-layer structure, including an intermediate n-type Ga/sub 1-x/Al/sub x/As current blocking layer, is grown by one-step liquid phase epitaxy on a p-type substrate with a mesa etched in the stripe direction. Above the mesa a narrow current injection path is created by local conversion of the blocking layer due to outdiffusion of p-type dopants from the neighboring p-type cladding layer and substrate. Lasers emitting at 770 nm have thus been obtained with cw room-temperature threshold currents of 70 mA and operating stably in the fundamental transverse mode up to pulsed output powers of 100 mW.

• Research Organization: Philips Research Laboratories, Nederlandse Philipsbedrijven B. V., P. O. Box 80 000, 5600 JA Eindhoven, The Netherlands
• OSTI ID: 5679933
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 43:9; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLITUDES
ARSENIC COMPOUNDS
ARSENIDES
DATA
DIFFUSION
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY
ENERGY-LEVEL TRANSITIONS
EPITAXY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
LAYERS
LIQUID PHASE EPITAXY
MEDIUM TEMPERATURE
NUMERICAL DATA
OPTICAL MODES
OSCILLATION MODES
PNICTIDES
POWER
PULSES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
STIMULATED EMISSION
THRESHOLD ENERGY
VISIBLE RADIATION