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U.S. Department of Energy
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Preparation and characterization of hydrogenated amorphous silicon thin films and thin film solar cells produced by ion plating techniques. Second quarterly progress report, 1 April 1979-30 Jun 1979

Technical Report ·
DOI:https://doi.org/10.2172/5949198· OSTI ID:5949198
Using quartz substrates, hydrogenated a-Si thin films have now been produced both by flow discharge decomposition of silane and by the controlled ion plating of high purity silicon through flow discharges composed of silane, hydrogen, and argon using a modified Takagi apparatus. Thus far, thin films produced by both glow discharge decomposition of silane with and without magnetic confinement and by ion plating have been characterized and compared using x-ray diffractometry, infrared spectrometry, optical absorption spectroscopy and by their temperature dependence of resistivity. Based on these results, the ion plating technique of producing a-Si thin films looks extremely encouraging. Films have been produced at approximately ten times the decomposition rate obtained using glow discharge decomposition of silane, even with magnetic field containment. In addition the resulting thin film properties measured to date compare favorably with those obtained from glow discharge produced films.
Research Organization:
Duke Univ., Durham, NC (USA). Dept. of Mechanical Engineering and Materials Science
Sponsoring Organization:
USDOE
DOE Contract Number:
AC03-79ET23041
OSTI ID:
5949198
Report Number(s):
DOE/ET/23041-2
Country of Publication:
United States
Language:
English